US PATENT SUBCLASS 438 / 520
.~.~.~.~ Providing nondopant ion (e.g., proton, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
518  DF  .~.~ Of compound semiconductor {3}
519  DF  .~.~.~ Including multiple implantation steps {2}
520.~.~.~.~ Providing nondopant ion (e.g., proton, etc.)

DEFINITION

Classification: 438/520

Providing nondopant ion (e.g., proton, etc.):

(under subclass 519) Process wherein a nonelectrically active impurity species is implanted into a compound semiconductor region of the substrate in conjunction with the prior, simultaneous, or subsequent implantation of an electrically active dopant ion.

(1) Note. Process for the implantation of positively charged hydrogen ions (i.e., protons) in conjunction with the implantation of a dopant is proper herein.