US PATENT SUBCLASS 438 / 521
.~.~.~.~ Using same conductivity-type dopant

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
518  DF  .~.~ Of compound semiconductor {3}
519  DF  .~.~.~ Including multiple implantation steps {2}
521.~.~.~.~ Using same conductivity-type dopant

DEFINITION

Classification: 438/521

Using same conductivity-type dopant:

(under subclass 519) Process wherein the multiple

implantation steps introduce electrically active dopant ions of the same conductivity type into one or more regions of the compound semiconductor substrate.