US PATENT SUBCLASS 438 / 267
.~.~.~.~ Including forming gate electrode as conductive sidewall spacer to another electrode

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
257  DF  .~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate) {8}
266  DF  .~.~.~ Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.) {1}
267.~.~.~.~ Including forming gate electrode as conductive sidewall spacer to another electrode

DEFINITION

Classification: 438/267

Including forming gate electrode as conductive sidewall spacer to another electrode:

(under subclass 266) Process including a step of forming a conductive electrode on the sidewall of another electrode wherein the conductive sidewall serves as a gate electrode.