US PATENT SUBCLASS 438 / 266
.~.~.~ Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
257  DF  .~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate) {8}
266.~.~.~ Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.) {1}
267  DF  .~.~.~.~> Including forming gate electrode as conductive sidewall spacer to another electrode

DEFINITION

Classification: 438/266

Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.):

(under subclass 257) Process for making a floating gate-type field effect transistor having an additional, nonmemory control electrode (i.e., having direct electrical contact thereto) or channel portion.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

316, for a floating gate memory device with an additional contacted control electrode.