US PATENT SUBCLASS 438 / 142
MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
143  DF  .~> Gettering of semiconductor substrate
144  DF  .~> Charge transfer device (e.g., CCD, etc.) {4}
149  DF  .~> On insulating substrate or layer (e.g., TFT, etc.) {2}
167  DF  .~> Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
186  DF  .~> Having junction gate (e.g., JFET, SIT, etc.) {9}
197  DF  .~> Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}

DEFINITION

Classification: 438/142

MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS:

(under the class definition) Process for forming or altering a pair of device active regions (i.e., source or drain) separated by a gate structure intended to permit or block the flow of electrical current therebetween.

(1) Note. To be proper hereunder, the claim must include a positive recitation of (a) formation of semiconductive active regions or (b) altering the electrical properties of active semiconductive regions of the substrate. [figure]

SEE OR SEARCH THIS CLASS, SUBCLASS:

49, for a process of making a chemically sensitive field effect transistor (i.e., CHEMFET.)