US PATENT SUBCLASS 438 / 167
.~ Having Schottky gate (e.g., MESFET, HEMT, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167.~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
168  DF  .~.~> Specified crystallographic orientation
169  DF  .~.~> Complementary Schottky gate field effect transistors
170  DF  .~.~> And bipolar device
171  DF  .~.~> And passive electrical device (e.g., resistor, capacitor, etc.)
172  DF  .~.~> Having heterojunction (e.g., HEMT, MODFET, etc.)
173  DF  .~.~> Vertical channel
174  DF  .~.~> Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
175  DF  .~.~> Buried channel
176  DF  .~.~> Plural gate electrodes (e.g., dual gate, etc.)
177  DF  .~.~> Closed or loop gate
178  DF  .~.~> Elemental semiconductor
179  DF  .~.~> Asymmetric
180  DF  .~.~> Self-aligned {1}

DEFINITION

Classification: 438/167

Having Schottky gate (e.g., MESFET, HEMT, etc.):

(under subclass 142) Process for making a field effect transistor which possesses a gate which forms a metal-semiconductor rectifying junction with the underlying semiconductive active channel region.