US PATENT SUBCLASS 438 / 176
.~.~ Plural gate electrodes (e.g., dual gate, etc.)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
176.~.~ Plural gate electrodes (e.g., dual gate, etc.)

DEFINITION

Classification: 438/176

Plural gate electrodes (e.g., dual gate, etc.):

(under subclass 167) Process for making a Schottky gate field effect transistor wherein plural gate electrodes on either

the same or opposite side of the active channel region serve to control the electrical conduction characteristics of the semiconductive active channel region.