US PATENT SUBCLASS 438 / 180
.~.~ Self-aligned

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
180.~.~ Self-aligned {1}
181  DF  .~.~.~> Doping of semiconductive region {3}

DEFINITION

Classification: 438/180

Self-aligned:

(under subclass 167) Process for making a Schottky gate field effect transistor wherein a previously formed device feature is utilized to make device regions in the desired registration to the previously formed feature.

(1) Note. A self-aligned gate is one which is aligned between the source and drain via a masking process which uses the gate material itself to achieve the registration of the related device regions.