US PATENT SUBCLASS 438 / 181
.~.~.~ Doping of semiconductive region

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
180  DF  .~.~ Self-aligned {1}
181.~.~.~ Doping of semiconductive region {3}
182  DF  .~.~.~.~> T-gate
183  DF  .~.~.~.~> Dummy gate
184  DF  .~.~.~.~> Utilizing gate sidewall structure {1}

DEFINITION

Classification: 438/181

Doping of semiconductive region:

(under subclass 180) Process wherein a semiconductive region of the substrate is changed in electrical properties by introduction of an electrically active impurity.