US PATENT SUBCLASS 438 / 184
.~.~.~.~ Utilizing gate sidewall structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
180  DF  .~.~ Self-aligned {1}
181  DF  .~.~.~ Doping of semiconductive region {3}
184.~.~.~.~ Utilizing gate sidewall structure {1}
185  DF  .~.~.~.~.~> Multiple doping steps

DEFINITION

Classification: 438/184

Utilizing gate sidewall structure:

(under subclass 181) Process wherein a gate sidewall structure is utilized during the doping of semiconductive regions adjacent the gate structure.

(1) Note. The sidewall structure may function as a masking layer or dopant source during the self-aligned doping step.