US PATENT SUBCLASS 438 / 183
.~.~.~.~ Dummy gate


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
180  DF  .~.~ Self-aligned {1}
181  DF  .~.~.~ Doping of semiconductive region {3}
183.~.~.~.~ Dummy gate


DEFINITION

Classification: 438/183

Dummy gate:

(under subclass 181) Process wherein a temporary gate is formed or utilized at any stage in the process and is intended to be removed or have no function in the final device.