US PATENT SUBCLASS 438 / 173
.~.~ Vertical channel

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
173.~.~ Vertical channel

DEFINITION

Classification: 438/173

Vertical channel:

(under subclass 167) Process for making a Schottky gate field effect transistor wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.