US PATENT SUBCLASS 438 / 174
.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
174.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

DEFINITION

Classification: 438/174

Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.):

(under subclass 167) Process for making a Schottky gate field effect transistor having a step of introducing an electrically active dopant species into the semiconductor channel region beneath the gate electrode.

(1) Note. To be proper herein, the transistor channel region must possess semiconductive characteristics prior to the introduction of the dopant.