US PATENT SUBCLASS 438 / 172
.~.~ Having heterojunction (e.g., HEMT, MODFET, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
172.~.~ Having heterojunction (e.g., HEMT, MODFET, etc.)

DEFINITION

Classification: 438/172

Having heterojunction (e.g., HEMT, MODFET, etc.):

(under subclass 167) Process for making a Schottky gate field effect transistor wherein the Schottky gate field effect transistor possesses an interface between two dissimilar semiconductor materials which constitute a junction.