438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
167 | DF | .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13} |
175 | .~.~ Buried channel |