US PATENT SUBCLASS 438 / 175
.~.~ Buried channel


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
175.~.~ Buried channel


DEFINITION

Classification: 438/175

Buried channel:

(under subclass 167) Process for making a Schottky gate field effect transistor wherein the channel formed between the source and drain regions is configured so as to be buried beneath the semiconductor substrate surface.