US PATENT SUBCLASS 438 / 177
.~.~ Closed or loop gate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
177.~.~ Closed or loop gate

DEFINITION

Classification: 438/177

Closed or loop gate:

(under subclass 167) Process for making a Schottky field effect transistor wherein the gate electrode is configured such that it closes upon itself to thereby totally surround one of the device active regions.