US PATENT SUBCLASS 438 / 170
.~.~ And bipolar device

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
170.~.~ And bipolar device

DEFINITION

Classification: 438/170

And bipolar device:

(under subclass 167) Process for making a bipolar transistor in addition to the Schottky gate field effect transistor.