| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 144 | ![]() | .~ Charge transfer device (e.g., CCD, etc.) {4} |
| 145 | DF | .~.~> Having additional electrical device |
| 146 | DF | .~.~> Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.) |
| 147 | DF | .~.~> Changing width or direction of channel (e.g., meandering channel, etc.) |
| 148 | DF | .~.~> Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.) |