US PATENT SUBCLASS 438 / 146
.~.~ Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
144  DF  .~ Charge transfer device (e.g., CCD, etc.) {4}
146.~.~ Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

DEFINITION

Classification: 438/146

Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.):

(under subclass 144) Process for making a charge transfer device structure wherein the transfer of such charge minima is by majority carriers of the semiconductive material (i.e., by electrons in n-type material, and is by holes in p-type semiconductive material).