US PATENT SUBCLASS 438 / 149
.~ On insulating substrate or layer (e.g., TFT, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149.~ On insulating substrate or layer (e.g., TFT, etc.) {2}
150  DF  .~.~> Specified crystallographic orientation
151  DF  .~.~> Having insulated gate {11}

DEFINITION

Classification: 438/149

On insulating substrate or layer (e.g., TFT, etc.):

(under subclass 142) Process for making a field effect transistor from a semiconductive layer formed upon an insulating substrate (for example, glass or sapphire) or an insulating layer.

SEE OR SEARCH THIS CLASS, SUBCLASS:

30, for process of making a device or circuit emissive of nonelectrical signal comprising an array of field effect transistors on an insulating substrate combined with a liquid crystal optical material.