US PATENT SUBCLASS 438 / 150
.~.~ Specified crystallographic orientation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
150.~.~ Specified crystallographic orientation

DEFINITION

Classification: 438/150

Specified crystallos:graphic orientation:

(under subclass 149) Process wherein a given feature of the field effect device on an insulating substrate or layer is formed in a definite crystallos:graphic relationship relative to the insulating substrate or layer or the semiconductor layer thereupon.