| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 149 | DF | .~ On insulating substrate or layer (e.g., TFT, etc.) {2} |
| 151 |  | .~.~ Having insulated gate {11} |
| 152 | DF | .~.~.~> Combined with electrical device not on insulating substrate or layer {1} |
| 154 | DF | .~.~.~> Complementary field effect transistors |
| 155 | DF | .~.~.~> And additional electrical device on insulating substrate or layer |
| 156 | DF | .~.~.~> Vertical channel |
| 157 | DF | .~.~.~> Plural gate electrodes (e.g., dual gate, etc.) |
| 158 | DF | .~.~.~> Inverted transistor structure {2} |
| 161 | DF | .~.~.~> Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes) |
| 162 | DF | .~.~.~> Introduction of nondopant into semiconductor layer |
| 163 | DF | .~.~.~> Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.) |
| 164 | DF | .~.~.~> Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.) {1} |
| 166 | DF | .~.~.~> Including recrystallization step |