US PATENT SUBCLASS 438 / 157
.~.~.~ Plural gate electrodes (e.g., dual gate, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
157.~.~.~ Plural gate electrodes (e.g., dual gate, etc.)

DEFINITION

Classification: 438/157

Plural gate electrodes (e.g., dual gate, etc.):

(under subclass 151) Process for making a field effect transistor formed on an insulating layer or substrate wherein plural insulated gate electrodes on either the same or opposite sides of the active channel region serve to control the electrical conduction characteristics of the semiconductive active channel region.

SEE OR SEARCH THIS CLASS, SUBCLASS:

283, for a process of making an insulated gate field effect transistor having either dual gate or opposed gate structure.