US PATENT SUBCLASS 438 / 166
.~.~.~ Including recrystallization step

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
166.~.~.~ Including recrystallization step

DEFINITION

Classification: 438/166

Including recrystallization step:

(under subclass 151) Process wherein the crystalline structure of the semiconductive layer is altered or modified (e.g., from amorphous to polycrystalline or single crystalline).

SEE OR SEARCH THIS CLASS, SUBCLASS:

150, for a process of making a field effect transistor on an insulating substrate or layer having a specified crystallos:graphic orientation.