US PATENT SUBCLASS 438 / 161
.~.~.~ Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
161.~.~.~ Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)

DEFINITION

Classification: 438/161

Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes):

(under subclass 151) Process wherein the source or drain electrodes of the field effect transistor are formed on the insulating substrate or layer prior to the deposition of a semiconductive layer.