US PATENT SUBCLASS 438 / 162
.~.~.~ Introduction of nondopant into semiconductor layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
162.~.~.~ Introduction of nondopant into semiconductor layer

DEFINITION

Classification: 438/162

Introduction of nondopant into semiconductor layer:

(under subclass 151) Process wherein a nonelectrically active impurity (i.e., one that does not change the electrically properties) is introduced into the semiconductive layer.