US PATENT SUBCLASS 438 / 164
.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
164.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.) {1}
165  DF  .~.~.~.~> Including differential oxidation


DEFINITION

Classification: 438/164

Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.):

(under subclass 151) Process wherein the semiconductor layer selectively deposited or deposited and subsequently patterned to form a semiconductive region electrically isolated from laterally adjoining semiconductor regions.

(1) Note. The separate laterally adjacent semiconductor layers are each intended to possess a single field effect transistor and be electrically isolated with respect to one another prior to electrically interconnecting.