US PATENT SUBCLASS 438 / 165
.~.~.~.~ Including differential oxidation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
164  DF  .~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.) {1}
165.~.~.~.~ Including differential oxidation

DEFINITION

Classification: 438/165

Including differential oxidation:

(under subclass 164) Process in which the patterning of the semiconductive layer includes a step of oxidizing the semiconductive layer to form regions of differing oxide thickness.