US PATENT SUBCLASS 438 / 154
.~.~.~ Complementary field effect transistors

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
154.~.~.~ Complementary field effect transistors

DEFINITION

Classification: 438/154

Complementary field effect transistors:

(under subclass 151) Process for making plural field effect transistors of opposite conductivity type (i.e., wherein source and drain regions of a first field effect transistor are of opposite conductivity type to source and drain regions of a second field effect transistor).