US PATENT SUBCLASS 438 / 163
.~.~.~ Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
163.~.~.~ Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)

DEFINITION

Classification: 438/163

Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.):

(under subclass 151) Process wherein a particular dimension of the active channel region of the field effect transistor (e.g., thickness, length, etc.) is adjusted.