US PATENT SUBCLASS 438 / 155
.~.~.~ And additional electrical device on insulating substrate or layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
155.~.~.~ And additional electrical device on insulating substrate or layer

DEFINITION

Classification: 438/155

And additional electrical device on insulating substrate or layer:

(under subclass 151) Process for making a field effect transistor formed on an insulating layer or substrate combined with an additional electrical device which is also formed on an insulating substrate or layer.

(1) Note. The additional electrical device must be other than an insulated gate field effect transistor if formed utilizing the same semiconductive layer or may be any type of electrical device if formed utilizing a different semiconductive layer with the structure formed referred to as a vertically stacked or 3-dimensional structure.

SEE OR SEARCH THIS CLASS, SUBCLASS:

152, for a process of making a field effect transistor on an insulating substrate or layer and an additional electrical device not on an insulating substrate or layer.