US PATENT SUBCLASS 438 / 158
.~.~.~ Inverted transistor structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
158.~.~.~ Inverted transistor structure {2}
159  DF  .~.~.~.~> Source-to-gate or drain-to-gate overlap
160  DF  .~.~.~.~> Utilizing backside irradiation

DEFINITION

Classification: 438/158

Inverted transistor structure:

(under subclass 151) Process for making a field effect transistor formed on an insulating substrate or layer wherein the gate electrode of the field effect transistor is formed so as to be in direct contact with the insulating substrate or layer.