US PATENT SUBCLASS 438 / 160
.~.~.~.~ Utilizing backside irradiation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
158  DF  .~.~.~ Inverted transistor structure {2}
160.~.~.~.~ Utilizing backside irradiation

DEFINITION

Classification: 438/160

Utilizing backside irradiation:

(under subclass 158) Process wherein single or multiple layers formed over the gate are patterned by irradiating a photoresist layer with a radiation source located on the opposite side of the substrate from which the gate is formed.