US PATENT SUBCLASS 438 / 152
.~.~.~ Combined with electrical device not on insulating substrate or layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
149  DF  .~ On insulating substrate or layer (e.g., TFT, etc.) {2}
151  DF  .~.~ Having insulated gate {11}
152.~.~.~ Combined with electrical device not on insulating substrate or layer {1}
153  DF  .~.~.~.~> Complementary field effect transistors

DEFINITION

Classification: 438/152

Combined with electrical device not on insulating substrate or layer:

(under subclass 151) Process for making a field effect transistor formed on an insulating substrate or layer combined with an additional electrical device which is not formed upon an insulating substrate or layer.

(1) Note. The electrical device not on an insulating substrate or layer is often referred to as a bulk device while the electrical device on the insulating substrate or layer is often referred to as a thin film device with the combined structure either horizontally disposed or vertically stacked (i.e., 3-dimensional).

SEE OR SEARCH THIS CLASS, SUBCLASS:

155, for a process of making a field effect transistor on an insulating substrate or layer and an additional electrical device on an insulating substrate or layer.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

350+, for an insulated gate field effect device formed on a single crystal semiconductor layer on an insulating substrate combined with a diverse-type device structure.