US PATENT SUBCLASS 438 / FOR 302
.~.~ To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 302.~.~ To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)

DEFINITION

Classification: 438/FOR.302

To control carrier lifetime, i.e., deep level dopant Au(Gold), Cr(Chromium), Fe(Iron), Ni(Nickel), etc.:

Foreign art collection for processes involving the introduction of a less predominant carrier, e.g., Au(Gold), Cr(Chromium), Fe(Iron), Ni(Nickel), etc.