US PATENT SUBCLASS 438 / FOR 134
.~.~ Silicon, germanium, or gallium containing substrate (156/662.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 134.~.~ Silicon, germanium, or gallium containing substrate (156/662.1)

DEFINITION

Classification: 438/FOR.134

Silicon, germanium, or gallium containing substrate:

Foreign art collection for processes wherein the substrate contains silicon, germanium, or gallium in elemental form or in chemical combination.