| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| 983 | DF | ZENER DIODES {1} |
| FOR 100 |  | .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17} |
| FOR 101 | DF | .~.~> Measuring, testing, or inspecting (156/626.1) {1} |
| FOR 103 | DF | .~.~> Altering the etchability of a substrate by alloying, diffusing, or chemical reacting (156/628.1) |
| FOR 104 | DF | .~.~> With uniting of preforms (e.g., laminating, etc.) (156/629.1) {2} |
| FOR 110 | DF | .~.~> With in situ activation or combining of etching components on surface (156/635.1) |
| FOR 111 | DF | .~.~> With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1) |
| FOR 112 | DF | .~.~> With relative movement between the substrate and a confined pool of etchant (156/637.1) {2} |
| FOR 115 | DF | .~.~> Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant (156/640.1) |
| FOR 116 | DF | .~.~> Recycling or regenerating etchant (156/642.1) |
| FOR 117 | DF | .~.~> With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1) |
| FOR 118 | DF | .~.~> Forming or increasing the size of an aperture (156/644.1) |
| FOR 119 | DF | .~.~> With mechanical deformation, severing, or abrading of a substrate (156/ 645.1) |
| FOR 120 | DF | .~.~> Etchant is a gas (156/646.1) |
| FOR 121 | DF | .~.~> Etching according to crystalline planes (156/647.1) |
| FOR 122 | DF | .~.~> Etching isolates or modifies a junction in a barrier layer (156/648.1) {1} |
| FOR 124 | DF | .~.~> Sequential application of etchant material (156/650.1) {1} |
| FOR 128 | DF | .~.~> Differential etching of a substrate (156/654.1) {2} |
| FOR 134 | DF | .~.~> Silicon, germanium, or gallium containing substrate (156/662.1) |