US PATENT SUBCLASS 438 / 625
.~.~.~.~ At least one metallization level formed of diverse conductive layers

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
618  DF  .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5}
622  DF  .~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) {8}
625.~.~.~.~ At least one metallization level formed of diverse conductive layers {4}
626  DF  .~.~.~.~.~> Planarization
627  DF  .~.~.~.~.~> At least one layer forms a diffusion barrier
628  DF  .~.~.~.~.~> Having adhesion promoting layer
629  DF  .~.~.~.~.~> Diverse conductive layers limited to viahole/plug {1}

DEFINITION

Classification: 438/625

At least one metallization level formed of diverse conductive layers:

(under subclass 622) Processes wherein at least one of the metallization levels is composed of plural conductive layers of differing composition or electrical characteristics.