US PATENT SUBCLASS 438 / 629
.~.~.~.~.~ Diverse conductive layers limited to viahole/plug

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
618  DF  .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5}
622  DF  .~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) {8}
625  DF  .~.~.~.~ At least one metallization level formed of diverse conductive layers {4}
629.~.~.~.~.~ Diverse conductive layers limited to viahole/plug {1}
630  DF  .~.~.~.~.~.~> Silicide formation

DEFINITION

Classification: 438/629

Diverse conductive layers limited to viahole/plug:

(under subclass 625) Processes wherein the diverse conductive layers of a metallization level are limited in lateral extent to the viahole or plug extending through an insulating layer.