US PATENT SUBCLASS 438 / 630
.~.~.~.~.~.~ Silicide formation


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
618  DF  .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5}
622  DF  .~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) {8}
625  DF  .~.~.~.~ At least one metallization level formed of diverse conductive layers {4}
629  DF  .~.~.~.~.~ Diverse conductive layers limited to viahole/plug {1}
630.~.~.~.~.~.~ Silicide formation


DEFINITION

Classification: 438/630

Silicide formation:

(under subclass 629) Processes wherein at least one of the diverse conductive layers is a compound of silicon and a metal.