| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| 584 | DF | COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2} |
| 597 | DF | .~ To form ohmic contact to semiconductive material {24} |
| 618 | DF | .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5} |
| 622 |  | .~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) {8} |
| 623 | DF | .~.~.~.~> Including organic insulating material between metal levels |
| 624 | DF | .~.~.~.~> Separating insulating layer is laminate or composite of plural insulating materials |
| 625 | DF | .~.~.~.~> At least one metallization level formed of diverse conductive layers {4} |
| 631 | DF | .~.~.~.~> Having planarization step {3} |
| 635 | DF | .~.~.~.~> Insulator formed by reaction with conductor (e.g., oxidation, etc.) |
| 636 | DF | .~.~.~.~> Including use of antireflective layer |
| 637 | DF | .~.~.~.~> With formation of opening (i.e., viahole) in insulative layer {3} |
| 641 | DF | .~.~.~.~> Selective deposition |