US PATENT SUBCLASS 438 / 637
.~.~.~.~ With formation of opening (i.e., viahole) in insulative layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
618  DF  .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5}
622  DF  .~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) {8}
637.~.~.~.~ With formation of opening (i.e., viahole) in insulative layer {3}
638  DF  .~.~.~.~.~> Having viaholes of diverse width
639  DF  .~.~.~.~.~> Having viahole with sidewall component
640  DF  .~.~.~.~.~> Having viahole of tapered shape

DEFINITION

Classification: 438/637

With formation of opening (i.e., viahole) in insulative layer:

(under subclass 622) Processes including a step of forming an opening in the separating insulating layer.