US PATENT SUBCLASS 438 / 190
.~.~ And passive device (e.g., resistor, capacitor, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
190.~.~ And passive device (e.g., resistor, capacitor, etc.)

DEFINITION

Classification: 438/190

And passive device (e.g., resistor, capacitor, etc.):

(under subclass 186) Process for making a junction gate field effect transistor having combined therewith an electrical device or component in which charge carriers do not change their energy levels and do not provide electrical rectification, amplification, or switching, but which does react to voltage and current input.