US PATENT SUBCLASS 438 / 376
.~.~.~.~.~ Single dopant forming regions of different depth or concentrations

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
371  DF  .~.~.~ Simultaneous introduction of plural dopants {1}
372  DF  .~.~.~.~ Plural doping steps {4}
376.~.~.~.~.~ Single dopant forming regions of different depth or concentrations

DEFINITION

Classification: 438/376

Single dopant forming regions of different depth or concentrations:

(under subclass 372) Process wherein the plural doping steps form regions which differ in amount of impurity or the distance the impurity has to travel inwardly from the surface.