US PATENT SUBCLASS 438 / 369
.~.~ Dopant implantation or diffusion

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369.~.~ Dopant implantation or diffusion {2}
370  DF  .~.~.~> Forming buried region (e.g., implanting through insulating layer, etc.)
371  DF  .~.~.~> Simultaneous introduction of plural dopants {1}

DEFINITION

Classification: 438/369

Dopant implantation or diffusion:

(under subclass 364) Process having a step of implanting or diffusing an electrically active dopant species into a semiconductive region of the substrate.