| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 309 | DF | FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25} |
| 364 | DF | .~ Self-aligned {2} |
| 369 | DF | .~.~ Dopant implantation or diffusion {2} |
| 371 | DF | .~.~.~ Simultaneous introduction of plural dopants {1} |
| 372 | | .~.~.~.~ Plural doping steps {4} |
| 373 | DF | .~.~.~.~.~> Multiple ion implantation steps {1} |
| 375 | DF | .~.~.~.~.~> Forming partially overlapping regions |
| 376 | DF | .~.~.~.~.~> Single dopant forming regions of different depth or concentrations |
| 377 | DF | .~.~.~.~.~> Through same mask opening |