US PATENT SUBCLASS 438 / 375
.~.~.~.~.~ Forming partially overlapping regions

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
371  DF  .~.~.~ Simultaneous introduction of plural dopants {1}
372  DF  .~.~.~.~ Plural doping steps {4}
375.~.~.~.~.~ Forming partially overlapping regions

DEFINITION

Classification: 438/375

Forming partially overlapping regions:

(under subclass 372) Process wherein the plural doping steps are affected upon localized areas which lap over each other in part.