US PATENT SUBCLASS 438 / 373
.~.~.~.~.~ Multiple ion implantation steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
371  DF  .~.~.~ Simultaneous introduction of plural dopants {1}
372  DF  .~.~.~.~ Plural doping steps {4}
373.~.~.~.~.~ Multiple ion implantation steps {1}
374  DF  .~.~.~.~.~.~> Using same conductivity-type dopant

DEFINITION

Classification: 438/373

Multiple ion implantation steps:

(under subclass 372) Process wherein the plural doping steps are affected by implanting electrically active dopant ions into semiconductive regions of the substrate.