US PATENT SUBCLASS 438 / 377
.~.~.~.~.~ Through same mask opening

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
369  DF  .~.~ Dopant implantation or diffusion {2}
371  DF  .~.~.~ Simultaneous introduction of plural dopants {1}
372  DF  .~.~.~.~ Plural doping steps {4}
377.~.~.~.~.~ Through same mask opening

DEFINITION

Classification: 438/377

Through same mask opening:

(under subclass 372) Process wherein plural doping steps are affected through the same opening in a dopant masking layer.