US PATENT SUBCLASS 438 / 243
.~.~.~.~ Trench capacitor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
243.~.~.~.~ Trench capacitor {3}
244  DF  .~.~.~.~.~> Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
245  DF  .~.~.~.~.~> With epitaxial layer formed over the trench
246  DF  .~.~.~.~.~> Including doping of trench surfaces {3}

DEFINITION

Classification: 438/243

Trench capacitor:

(under subclass 239) Process for making an insulated gate field effect transistor combined with a capacitor which is located in a groove in the semiconductor substrate.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

301+, for an insulated gate field effect transistor combined

with a trench capacitor.